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| Semiconductor SRA2211E PNP Silicon Transistor Descriptions * Switching application * Interface circuit and driver circuit application Features * * * * With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO SRA2211E Marking DR Package Code SOT-523 Outline Dimensions 1.600.1. 0.800.1. unit : Equivalent Circuit C(OUT) mm 1 1.00 BSC 1.600.1 3 0.2~0.3 B(IN) R1 2 R1 = 10K E(COMMON) 0.15 Min. 0.700.1 0~0.1 0.1 Min. PIN Connections 1. Base 2. Emitter 3. Collector KSR-4031-000 1 SRA2211E Absolute maximum ratings Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PD TJ TSTG Ratings -50 -50 -5 -100 150 150 -55 150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance (Ta=25C) Symbol ICBO IEBO hFE VCE(SAT) fT * Test Condition VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA - Min. Typ. Max. 120 -0.1 250 10 -500 -500 -0.3 - Unit nA nA V MHz K R1 * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KSR-4031-000 2 |
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